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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4928
DESCRIPTION *With TO-3PL package *High speed switching *High breakdown voltage,high current APPLICATIONS *Character display horizontal deflection output applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PL) and symbol Emitter DESCRIPTION
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO IC IC(surge) PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 15 20 150 150 -55~150 UNIT V V V A A W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC4928
TYP.
MAX
UNIT
V(BR )CEO
Collector-emitter breakdown voltage
IC=10mA; RBE=
800
V
V(BR )EBO
Emitter-base breakdown voltage
IE=10mA; IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=12A ;IB=3A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=12A ;IB=3A
1.5
V
ICES
Collector cut-off current
VCB=1500V; RBE=0
500
A
IEBO
Emitter cut-off current
VEB=6V; IC=0
500
A
hFE
DC current gain
IC=1A ; VCE=5V IC=8A ;IB1=1.4A;IB2-2.5A fH=31.5kHz
38
tf
Fall time
0.5
s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4928
Fig.2 Outline dimensions (unindicated tolerance:0.50 mm)
3


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