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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4928 DESCRIPTION *With TO-3PL package *High speed switching *High breakdown voltage,high current APPLICATIONS *Character display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PL) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC IC(surge) PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 15 20 150 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4928 TYP. MAX UNIT V(BR )CEO Collector-emitter breakdown voltage IC=10mA; RBE= 800 V V(BR )EBO Emitter-base breakdown voltage IE=10mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=12A ;IB=3A 5.0 V VBEsat Base-emitter saturation voltage IC=12A ;IB=3A 1.5 V ICES Collector cut-off current VCB=1500V; RBE=0 500 A IEBO Emitter cut-off current VEB=6V; IC=0 500 A hFE DC current gain IC=1A ; VCE=5V IC=8A ;IB1=1.4A;IB2-2.5A fH=31.5kHz 38 tf Fall time 0.5 s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4928 Fig.2 Outline dimensions (unindicated tolerance:0.50 mm) 3 |
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